Invention Grant
US07465210B2 Method of fabricating carbide and nitride nano electron emitters
有权
制造碳化物和氮化物纳米电子发射体的方法
- Patent Title: Method of fabricating carbide and nitride nano electron emitters
- Patent Title (中): 制造碳化物和氮化物纳米电子发射体的方法
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Application No.: US11060153Application Date: 2005-02-17
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Publication No.: US07465210B2Publication Date: 2008-12-16
- Inventor: Dong-Wook Kim , Sungho Jin , In-Kyung Yoo , Li-Han Chen
- Applicant: Dong-Wook Kim , Sungho Jin , In-Kyung Yoo , Li-Han Chen
- Applicant Address: US CA Oakland KR Gyeonggi-do
- Assignee: The Regents of the University of California,Samsung Electronics Co., Ltd.
- Current Assignee: The Regents of the University of California,Samsung Electronics Co., Ltd.
- Current Assignee Address: US CA Oakland KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Main IPC: H01J9/00
- IPC: H01J9/00 ; H01J9/39 ; H01J9/04
Abstract:
This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emitter structures.
Public/Granted literature
- US20080287030A1 METHOD OF FABRICATING CARBIDE AND NITRIDE NANO ELECTRON EMITTERS Public/Granted day:2008-11-20
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