Invention Grant
- Patent Title: Method of performing a double-sided process
- Patent Title (中): 执行双面过程的方法
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Application No.: US11850678Application Date: 2007-09-06
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Publication No.: US07566574B2Publication Date: 2009-07-28
- Inventor: Chen-Hsiung Yang
- Applicant: Chen-Hsiung Yang
- Applicant Address: TW Yang-Mei, Taoyuan Hsien
- Assignee: Touch Micro-System Technology Inc.
- Current Assignee: Touch Micro-System Technology Inc.
- Current Assignee Address: TW Yang-Mei, Taoyuan Hsien
- Agent Winston Hsu
- Priority: TW94139788A 20051111
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled into the front scribe lines. Subsequently, the structural pattern is bonded to a carrier wafer with a bonding layer, and a plurality of back scribe lines are defined on the back surface of the wafer. Finally, the filling layer filled in the front scribe lines is removed.
Public/Granted literature
- US20070298582A1 METHOD OF PERFORMING A DOUBLE-SIDED PROCESS Public/Granted day:2007-12-27
Information query
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