Invention Grant
- Patent Title: Semiconductor device manufacturing method and manufacturing apparatus
- Patent Title (中): 半导体装置的制造方法和制造装置
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Application No.: US11998357Application Date: 2007-11-29
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Publication No.: US07582955B2Publication Date: 2009-09-01
- Inventor: Munehide Saimen
- Applicant: Munehide Saimen
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2003-385418 20031114
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A method for manufacturing a semiconductor device is provided including: providing a reinforcing member on one surface of a wiring substrate that has a first region where a semiconductor chip is mounted and a second region around the first region, and has terminals extending from the first region to the second region formed on another surface thereof, in a manner that the reinforcing member overlaps the terminals and a part thereof protrudes from the first region to the second region; punching through from a surface side having the terminals in the wiring substrate, thereby cutting the terminals along a boundary between the first region and the second region; and punching through from the surface side having the reinforcing member in the wiring substrate, thereby continuously cutting the reinforcing member from an inboard side thereof to an outboard side along the boundary between the first region and the second region.
Public/Granted literature
- US20080090331A1 Semiconductor device manufacturing method and manufacturing apparatus Public/Granted day:2008-04-17
Information query
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