Invention Grant
- Patent Title: Ion implantation apparatus and ion implanting method
- Patent Title (中): 离子注入装置和离子注入方法
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Application No.: US11712949Application Date: 2007-03-02
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Publication No.: US07642530B2Publication Date: 2010-01-05
- Inventor: Takeshi Shibata , Hiroshi Hashimoto , Tadahiko Hirakawa , Kazuhiko Tonari
- Applicant: Takeshi Shibata , Hiroshi Hashimoto , Tadahiko Hirakawa , Kazuhiko Tonari
- Applicant Address: JP Tokyo JP Kanagawa JP Osaka JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,ULVAC, Inc.,Sanyo Electric Co., Ltd.,Sony Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,ULVAC, Inc.,Sanyo Electric Co., Ltd.,Sony Corporation
- Current Assignee Address: JP Tokyo JP Kanagawa JP Osaka JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2004-097065 20040329
- Main IPC: H01J37/08
- IPC: H01J37/08
Abstract:
An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrument measures the incident angle of each of the ion beams. A controller is provided with information from the incident angle measuring instrument and controls the ion irradiation unit in accordance with the information so that a difference among incident angles is set to within ±0.1°.
Public/Granted literature
- US20070152173A1 Ion implantation apparatus and ion implanting method Public/Granted day:2007-07-05
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