Invention Grant
- Patent Title: Process of manufacturing a shallow trench isolation and process of treating bottom surface of the shallow trench for avoiding bubble defects
- Patent Title (中): 制造浅沟槽隔离的过程和处理浅沟槽底面以避免气泡缺陷的过程
-
Application No.: US11674624Application Date: 2007-02-13
-
Publication No.: US07645678B2Publication Date: 2010-01-12
- Inventor: Hsin-Chang Wu
- Applicant: Hsin-Chang Wu
- Applicant Address: TW Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
The present invention discloses a process of manufacturing an STI for avoiding bubble defects, in which, after the shallow trench is formed by etching, substance containing carbon or oxygen on the bottom of the shallow trench is removed, and then the process is continued to accomplish the STI. Alternatively, the removal of substance containing carbon or oxygen may be performed after the oxide liner and the silicon nitride liner are formed on the bottom surface of the shallow trench. The present invention also discloses a process of treating bottom surface of the shallow trench. After the bottom surface of the shallow trench is treated, the bubble defects due to the use of the silicon nitride liner can be avoided.
Public/Granted literature
Information query
IPC分类:
