Invention Grant
- Patent Title: Void reduction in indium thermal interface material
- Patent Title (中): 铟热界面材料的空隙减少
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Application No.: US11422795Application Date: 2006-06-07
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Publication No.: US07651938B2Publication Date: 2010-01-26
- Inventor: Seah Sun Too , Hsiang Wan Liau , Janet Kirkland , Tek Seng Tan , Maxat Touzelbaev , Raj N. Master
- Applicant: Seah Sun Too , Hsiang Wan Liau , Janet Kirkland , Tek Seng Tan , Maxat Touzelbaev , Raj N. Master
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Timothy M. Honeycutt
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/12
Abstract:
Thermal interface materials and method of using the same in packaging are provided. In one aspect, a thermal interface material is provided that includes an indium preform that has a first surface and a second surface opposite to the first surface, an interior portion and a peripheral boundary. The indium preform has a channel extending from the peripheral boundary towards the interior portion. The channel enables flux to liberate during thermal cycling.
Public/Granted literature
- US20070284737A1 Void Reduction in Indium Thermal Interface Material Public/Granted day:2007-12-13
Information query
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