Invention Grant
- Patent Title: Signal sampling apparatus and method for DRAM memory
- Patent Title (中): 用于DRAM存储器的信号采样装置和方法
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Application No.: US11675572Application Date: 2007-02-15
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Publication No.: US07652936B2Publication Date: 2010-01-26
- Inventor: Yi Lin Chen
- Applicant: Yi Lin Chen
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstmeyer & Risley
- Priority: TW95106240A 20060224
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C8/00 ; G11C8/18 ; G11C5/00
Abstract:
A signal sampling apparatus for a DRAM memory comprises a phase delay circuit adapted for receiving a data signal and delaying the data signal by a predetermined time to generate a delay signal; and a sampling circuit for sampling the data signal according to the delay signal.
Public/Granted literature
- US20070201300A1 SIGNAL SAMPLING APPARATUS AND METHOD FOR DRAM MEMORY Public/Granted day:2007-08-30
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