A solid-state imaging device comprises: a semiconductor substrate; and a plurality of photoelectric conversion elements forming a square lattice pattern extending in a column direction and in a row direction substantially perpendicular to the row direction, on a surface of the semiconductor substrate, wherein said plurality of photoelectric conversion elements comprises: a plurality of first photoelectric conversion elements that conduct photoelectric conversion of a relatively higher sensitivity on an amount of incident light; and a plurality of second photoelectric conversion elements that conduct photoelectric conversion of a relatively lower sensitivity on the amount of incident light, wherein said plurality of first photoelectric conversion elements and said plurality of second photoelectric conversion elements are arranged in respective checkered patterns, and wherein said plurality of first photoelectric conversion elements are larger in size than said plurality of second photoelectric conversion elements.