Invention Grant
- Patent Title: Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof
- Patent Title (中): 制造超高拉伸应力膜及其应变硅晶体管的方法
-
Application No.: US12013482Application Date: 2008-01-14
-
Publication No.: US07655987B2Publication Date: 2010-02-02
- Inventor: Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
- Applicant: Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
- Applicant Address: TW Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
A metal-oxide-semiconductor (MOS) transistor device is disclosed. The MOS transistor device comprises a semiconductor substrate; a gate structure on the semiconductor substrate; source/drain regions on the semiconductor substrate adjacent to the gate structure; an ultra-high tensile-stressed nitride film having a hydrogen concentration of less than 1E22 atoms/cm3 covering the gate structure and the source/drain regions; and an inter-layer dielectric (ILD) film over the ultra-high tensile-stressed nitride film.
Public/Granted literature
- US20080142902A1 METHOD FOR FABRICATING ULTRA-HIGH TENSILE-STRESSED FILM AND STRAINED-SILICON TRANSISTORS THEREOF Public/Granted day:2008-06-19
Information query
IPC分类:
