Invention Grant
US07656191B2 Distributed memory in field-programmable gate array integrated circuit devices
有权
现场可编程门阵列集成电路器件中的分布式存储器
- Patent Title: Distributed memory in field-programmable gate array integrated circuit devices
- Patent Title (中): 现场可编程门阵列集成电路器件中的分布式存储器
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Application No.: US12156403Application Date: 2008-05-30
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Publication No.: US07656191B2Publication Date: 2010-02-02
- Inventor: David Lewis , Paul Leventis , Vaughn Betz , Thomas Yau-Tsun Wong , Andy Lee , Philip Pan
- Applicant: David Lewis , Paul Leventis , Vaughn Betz , Thomas Yau-Tsun Wong , Andy Lee , Philip Pan
- Applicant Address: US CA San Jose
- Assignee: Altera Corporation
- Current Assignee: Altera Corporation
- Current Assignee Address: US CA San Jose
- Agency: Ropes & Gray LLP
- Agent Robert R. Jackson
- Main IPC: H03K19/177
- IPC: H03K19/177

Abstract:
Circuitry for facilitating the use of the memory elements in the look-up tables (“LUTs”) of a field programmable gate array (“FPGA”) as user-accessible, distributed RAM. For example, a register associated with a LUT and that is not needed in the read data path in user RAM mode can be used to register data for writing in user RAM mode. As another example, an otherwise unneeded register associated with a LUT can be used to provide a synchronous read address signal for user RAM mode. Several other features are shown for similarly facilitating user RAM mode with minimal (if any) additional circuitry being required in the FPGA.
Public/Granted literature
- US20080231316A1 Distributed memory in field-programmable gate array integrated circuit devices Public/Granted day:2008-09-25
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