Invention Grant
- Patent Title: Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
- Patent Title (中): 具有双频偏压的化学气相沉积室和使用其制造光掩模的方法
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Application No.: US11564354Application Date: 2006-11-29
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Publication No.: US07658969B2Publication Date: 2010-02-09
- Inventor: Ajay Kumar , Virinder Grewal , Wai-Fan Yau
- Applicant: Ajay Kumar , Virinder Grewal , Wai-Fan Yau
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
A method and apparatus for process integration in manufacture of a ask are disclosed. In one embodiment, a cluster tool suitable for process integration in manufacture of a photomask including a vacuum transfer chamber having coupled thereto at least one hard mask deposition chamber and at least one plasma chamber configured for etching chromium. In another embodiment, a method for process integration in manufacture of a photomask includes depositing a hard mask on a substrate in a first processing chamber, depositing a resist layer on the substrate, patterning the resist layer, etching the hard mask through apertures formed in the patterned resist layer in a second chamber; and etching a chromium layer through apertures formed in the hard mask in a third chamber.
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