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    Mycoherbicidal composition for suppressing water hyacinth
    5.
    发明授权
    Mycoherbicidal composition for suppressing water hyacinth 有权

    公开(公告)号：US10206405B2

    公开(公告)日：2019-02-19

    申请号：US15114109

    申请日：2015-01-23

    Applicant: Praharaju Laxminarayana ,  Ajay Kumar Singh

    Inventor： Ajay Kumar Singh

    IPC: A01N63/04 ,  A01N61/02 ,  A01N63/00 ,  C12R1/645

    Abstract: The present invention deals with a mycoherbicidal isolate of Setosphaeria monoceras sp. or extracts obtained therefrom, useful for the control of Water hyacinth. The present invention also discloses biological control compositions comprising fungal isolate extract formulated in a growth medium for maintaining the viability of extract when the biological control composition is applied to weed. The present invention also discloses methods of screening fungal isolate to determine if they exhibit biocontrol activity. The present invention also discloses use of Setosphaeria monoceras strain. In yet a further aspect the invention relates to use of an Setosphaeria strain for producing a herbicidal agent effective for controlling growth of water hyacinth plants. The strain used preferably is a strain having the characterizing features of Setosphaeria strain AGWH#1 1 as deposited at IMTECH under accession number MTCC 5974. The present invention to provide the 18s rRNA sequence analysis showed 96% nucleotide similarity of the Fungi to Setosphaeria monoceras. (AGBIO designated AGWH#1 1/NCIM1370/MTCC 5974) but also indicated nucleotide variation of this fungus from other known genus of Bipolaris, Pleosporaceae, Cochiliobolus, Alternaria including an environmentally acceptable alternative to synthetic chemical herbicides for the control of weeds, such as Water hyacinth. The present invention also discloses methods of whole genome study of strain.

    HYBRID WAFER DICING APPROACH USING A POLYGON SCANNING-BASED LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS
    8.
    发明申请
    HYBRID WAFER DICING APPROACH USING A POLYGON SCANNING-BASED LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 审中-公开
    使用基于多边形扫描的激光扫描过程和等离子体蚀刻过程的混合波形绘制方法

    公开(公告)号：US20160197015A1

    公开(公告)日：2016-07-07

    申请号：US14589600

    申请日：2015-01-05

    Applicant: Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    Inventor： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    IPC: H01L21/78 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L21/268 ,  H01L21/308

    CPC classification number: H01L21/78 ,  H01L21/0275 ,  H01L21/3086 ,  H01L21/67092 ,  H01L21/67207

    Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the plurality of integrated circuits. The mask is then patterned with a polygon scanning-based laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the plurality of integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the plurality of integrated circuits.

    Abstract translation: 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护多个集成电路的层构成。 然后通过基于多边形扫描的激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露多个集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对多个集成电路进行分割。

    Dynamic ion radical sieve and ion radical aperture for an inductively coupled plasma (ICP) reactor
    9.
    发明授权
    Dynamic ion radical sieve and ion radical aperture for an inductively coupled plasma (ICP) reactor 有权
    用于电感耦合等离子体（ICP）反应器的动态离子基团筛和离子基团孔

    公开(公告)号：US09287093B2

    公开(公告)日：2016-03-15

    申请号：US13455342

    申请日：2012-04-25

    Applicant: Saravjeet Singh ,  Graeme Jamieson Scott ,  Ajay Kumar

    Inventor： Saravjeet Singh ,  Graeme Jamieson Scott ,  Ajay Kumar

    IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32

    CPC classification number: H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334

    Abstract: Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.

    Abstract translation: 本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。 离子蚀刻室具有包围处理区域的室主体，设置在处理区域中并具有基板接收表面的基板支撑件，设置在室主体面向基板接收表面的壁上的等离子体源，离子基屏蔽 设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。 可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。 离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。 孔径尺寸，形状和/或中心轴位置可以使用插入件来改变。

    Wafer dicing from wafer backside and front side
    10.
    发明授权
    Wafer dicing from wafer backside and front side 有权
    从晶片背面和正面进行晶片切割

    公开(公告)号：US09224650B2

    公开(公告)日：2015-12-29

    申请号：US14103534

    申请日：2013-12-11

    Applicant: Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    Inventor： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    IPC: H01L21/00 ,  H01L21/46 ,  H01L21/30 ,  H01L21/78 ,  H01L21/308 ,  B23K26/32 ,  B23K26/36 ,  B23K26/40 ,  H01L21/311 ,  H01L21/3213

    CPC classification number: H01L21/78 ,  B23K26/32 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/08 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/3213 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Approaches for backside laser scribe plus front side laser scribe and plasma etch dicing of a wafer or substrate are described. For example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side thereof and metallization on a backside thereof involves patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside. The method also involves forming a mask on the front side. The method also involves patterning, from the front side, the mask with a second laser scribing process to provide a patterned mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines. The method also involves plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.

    Abstract translation: 描述了用于背面激光划片加正面激光划线和等离子体蚀刻切割晶片或衬底的方法。 例如，在其前侧划分具有多个集成电路的半导体晶片的方法，其背面上的金属化包括用第一激光划线工艺在背面上图案化金属化，以在第一激光划线工艺上提供第一多个激光划线 背面。 该方法还涉及在前侧形成掩模。 该方法还包括利用第二激光划线工艺从正面图案化掩模，以提供具有暴露在集成电路之间的半导体晶片的区域的第二多个划线的图案化掩模，其中第二多个划线是 与第一组多个划线对准。 该方法还包括通过第二多个划线对等离子体蚀刻半导体晶片以对集成电路进行分离。

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