Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
- Patent Title (中): 半导体装置及其制造方法，电路板和电子仪器
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Application No.: US12219833Application Date: 2008-07-29
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Publication No.: US07659142B2Publication Date: 2010-02-09
- Inventor: Nobuaki Hashimoto
- Applicant: Nobuaki Hashimoto
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP10-094007 19980323; JP11-075282 19990319
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L21/48 ; H01L21/44 ; H01L23/485 ; H01L23/488
Abstract:
A semiconductor device comprising: a semiconductor element having a plurality of electrodes; a passivation film formed on the semiconductor element in a region avoiding at least a part of each of the electrodes; a conductive foil provided at a given spacing from the surface on which the passivation film is formed; an external electrodes formed on the conductive foil; intermediate layer formed between the passivation film and the conductive foil to support the conductive foil; and wires electrically connecting the electrodes to the conductive foil; wherein a depression tapered in a direction from the conductive foil to the passivation film if formed under a part of the conductive foil that includes the connection with the external electrodes.
Public/Granted literature
- US20080305587A1 Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument Public/Granted day:2008-12-11
Information query
IPC分类:
