Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12137611Application Date: 2008-06-12
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Publication No.: US07659613B2Publication Date: 2010-02-09
- Inventor: Kazutaka Takagi
- Applicant: Kazutaka Takagi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-381897 20041228
- Main IPC: H01L23/04
- IPC: H01L23/04

Abstract:
A frame-shaped sidewall is provided on a metallic base plate surrounding a semiconductor element arranged on the metallic base plate, which is provided with a stepped surface positioned at lower level at a portion of the base plate than a main surface of the base plate. A first dielectric plate is arranged on one side of the semiconductor element and a first circuit pattern is formed on its surface, a second dielectric plate is arranged on another side of the semiconductor element and a second circuit pattern is formed on the first and the second dielectric plate. An insulator is mounted on the stepped surface of the base plate, which forms a part of the sidewall. Power supply portions are provided including a band-shaped conductor. An interconnection is provided which connects the band-shaped conductor to the circuit pattern.
Public/Granted literature
- US20080246141A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-10-09
Information query
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