Invention Grant
- Patent Title: Reduced leakage voltage level shifting circuit
- Patent Title (中): 降低泄漏电压电平移位电路
-
Application No.: US12339800Application Date: 2008-12-19
-
Publication No.: US07659768B2Publication Date: 2010-02-09
- Inventor: Samu Suryanarayana , Arvind Bomdica , Yikai Liang
- Applicant: Samu Suryanarayana , Arvind Bomdica , Yikai Liang
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Vedder Price P.C.
- Main IPC: H03L5/00
- IPC: H03L5/00
Abstract:
A level shifting circuit includes a first stage and a second stage. The first stage and second stage are operatively coupled to a first and second power supply. The first stage translates a differential input voltage into an intermediate differential voltage. The second stage translates the intermediate differential voltage into a differential output voltage and provides feedback to the first stage in response to translating the intermediate differential voltage. The first stage reduces current flow between the first and second power supply through the second stage in response to the feedback.
Public/Granted literature
- US20090167405A1 Reduced Leakage Voltage Level Shifting Circuit Public/Granted day:2009-07-02
Information query
