Invention Grant
- Patent Title: Organic film vapor deposition method
- Patent Title (中): 有机薄膜气相沉积法
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Application No.: US11389028Application Date: 2006-03-27
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Publication No.: US07662427B2Publication Date: 2010-02-16
- Inventor: Takuya Homme , Toshio Takabayashi , Hiroto Sato
- Applicant: Takuya Homme , Toshio Takabayashi , Hiroto Sato
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP1998-171192 19980618
- Main IPC: B05D5/06
- IPC: B05D5/06

Abstract:
An organic film vapor deposition method includes a first step of supporting a substrate formed with a scintillator on at least three protrusions of a target-support element disposed on a vapor deposition table so as to keep a distance from the vapor deposition table; a second step of introducing the vapor deposition table having the substrate supported by the target-support element into a vapor deposition chamber of a CVD apparatus; and a third step of depositing an organic film by CVD method onto all surfaces of the substrate, provided with the scintillator, introduced into the vapor deposition chamber.
Public/Granted literature
- US20060197035A1 Organic film vapor deposition method and a scintillator panel Public/Granted day:2006-09-07
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