Abstract:
The surfaces of an amorphous carbon substrate of a scintillator panel have undergone sandblasting, and an Al film 1 serving as a reflecting film is formed on one surface, and a columnar scintillator for converting incident radiation into visible light is formed on the surface of the Al film.
Abstract:
An organic film vapor deposition method includes a first step of supporting a substrate formed with a scintillator on at least three protrusions of a target-support element disposed on a vapor deposition table so as to keep a distance from the vapor deposition table; a second step of introducing the vapor deposition table having the substrate supported by the target-support element into a vapor deposition chamber of a CVD apparatus; and a third step of depositing an organic film by CVD method onto all surfaces of the substrate, provided with the scintillator, introduced into the vapor deposition chamber.
Abstract:
Scintillator panel (1) comprises a radiation transmitting substrate (5), which has heat resistance, a dielectric multilayer film mirror (6), as a light reflecting film and is formed on the radiation transmitting substrate (5), and a scintillator (10), disposed on the dielectric multilayer film mirror (6) and emits light by conversion of the radiation (30) that has been made to enter the radiation transmitting substrate (5) and has passed through the dielectric multilayer film mirror (6). Since the radiation transmitting substrate (5) has heat resistance, the dielectric multilayer film mirror (6) can be vapor deposited at a high temperature and, as a result, can be formed in a state of high reflectance. Also, unlike a metal film, the dielectric multilayer film mirror (6) will not corrode upon reacting with the scintillator (10).
Abstract:
In an X-ray image pickup apparatus comprising first and second semiconductor image sensor chips 14A, 14C arranged adjacent each other on a base plate 20, and a single scintillator panel 40 disposed on the first and second semiconductor image sensor chips, respective planes including surfaces of photosensitive regions of the first and second semiconductor image sensor chips have normals intersecting at a predetermined angle.
Abstract:
A radiation image sensor has a scintillator panel and an imaging device, and the scintillator panel comprises a radiation-transparent substrate, a deliquescent scintillator formed on the substrate, and an elastic organic film covering the scintillator, the scintillator panel and imaging device being bonded to each other with a matching oil interposed therebetween, whereas side wall portions of the scintillator panel and imaging device are firmly attached to each other with a resin.
Abstract:
Light-receiving devices are two-dimensionally arranged on a substrate, bonding pads electrically connected to the light-receiving devices in the respective rows or columns via signal lines are arranged on the outer periphery of the substrate, and a protective passivation film is disposed on the light-receiving devices and signal lines, thereby forming a light-receiving device array. On the light-receiving surface of the light-receiving device array, a scintillator made of columnar crystals of CsI is deposited. On the other hand, a resin frame formed like an elongated frame is disposed inside the bonding pads. Inside this frame, a protective film in which an inorganic film is held between organic films made of Parylene is laminated. The outer periphery of the protective film is in close contact with the resin frame with the aid of the coating resin.
Abstract:
Comprising a first step of supporting a substrate formed with a scintillator on at least three protrusions of a target-support element disposed on a vapor deposition table so as to keep a distance from said vapor deposition table; a second step of introducing said vapor deposition table having said substrate supported by said target-support element into a vapor deposition chamber of a CVD apparatus; and a third step of depositing an organic film by CVD method onto all surfaces of said substrate, provided with said scintillator, introduced into said vapor deposition chamber.
Abstract:
A scintillator panel (2) comprises a radiation-transparent substrate(10), aflat resin film (12) formed on the substrate (10), a reflecting film (14) formed on the flat resin film (12), a deliquescent scintillator (16) formed on the reflecting film (14), and a transparent organic film (18) covering the scintillator (16).
Abstract:
An Ag film as a light-reflecting film is formed on one surface of an a-C substrate of a scintillator panel. The entire surface of the Ag film is covered with an SiN film for protecting the Ag film. A scintillator having a columnar structure, which converts an incident radiation into visible light, is formed on the surface of the SiN film. The scintillator is covered with a polyparaxylylene film together with the substrate.
Abstract:
An Ag film as a light-reflecting film is formed on one surface of an a-C substrate of a scintillator panel. The entire surface of the Ag film is covered with an SiN film for protecting the Ag film. A scintillator having a columnar structure, which converts an incident radiation into visible light, is formed on the surface of the SiN film. The scintillator is covered with a polyparaxylylene film together with the substrate.