Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same, electronic device and method of manufacturing the same, and electronic instrument
- Patent Title (中): 半导体装置及其制造方法，电子装置及其制造方法以及电子仪器
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Application No.: US11752777Application Date: 2007-05-23
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Publication No.: US07662673B2Publication Date: 2010-02-16
- Inventor: Nobuaki Hashimoto
- Applicant: Nobuaki Hashimoto
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Hogan & Hartson LLP
- Priority: JP2003-115891 20030421
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor device including: a semiconductor substrate in which an integrated circuit is formed; an insulating layer formed on the semiconductor substrate and having a first surface and a second surface which is higher than the first surface; a first electrode formed to avoid the second surface and electrically connected to the inside of the semiconductor substrate; and a second electrode formed on the second surface and electrically connected to the inside of the semiconductor substrate.
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