Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof

Invention Grant

US07662730B2 Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof 有权

Title translation: 制造超高拉伸应力膜及其应变硅晶体管的方法

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Patent Title: Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof
Patent Title (中): 制造超高拉伸应力膜及其应变硅晶体管的方法
Application No.: US11164488

Application Date: 2005-11-24
Publication No.: US07662730B2

Publication Date: 2010-02-16
Inventor: Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
Applicant: Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
Applicant Address: TW Hsin-Chu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TW Hsin-Chu
Agent Winston Hsu
Main IPC: H01L21/471
IPC: H01L21/471

Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof

Abstract:

A method for fabricating an ultra-high tensile-stressed nitride film is disclosed. A PECVD process is first performed to deposit a transitional silicon nitride film over a substrate. The transitional silicon nitride film has a first concentration of hydrogen atoms. The transitional silicon nitride film is subjected to UV curing process for reducing the first concentration of hydrogen atoms to a second concentration of hydrogen atoms.

Abstract(Chinese):

公开了一种用于制造超高拉伸应力氮化物膜的方法。首先执行PECVD处理以在衬底上沉积过渡氮化硅膜。过渡氮化硅膜具有第一浓度的氢原子。将过渡氮化硅膜进行UV固化，将氢原子的第一浓度降低至第二浓度的氢原子。

Public/Granted literature

US20060199305A1 METHOD FOR FABRICATING ULTRA-HIGH TENSILE-STRESSED FILM AND STRAINED-SILICON TRANSISTORS THEREOF Public/Granted day:2006-09-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/471	.......无机层（H01L21/475，H01L21/4757优先）