Invention Grant
- Patent Title: Introducing nanotubes in trenches and structures formed thereby
- Patent Title (中): 在由此形成的沟槽和结构中引入纳米管
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Application No.: US11026320Application Date: 2004-12-29
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Publication No.: US07666465B2Publication Date: 2010-02-23
- Inventor: Paul B. Fischer , Anne E. Miller , Kenneth C. Cadien , Chris E. Barns
- Applicant: Paul B. Fischer , Anne E. Miller , Kenneth C. Cadien , Chris E. Barns
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kathy J. Ortiz
- Main IPC: B05D1/00
- IPC: B05D1/00 ; B05D1/04
Abstract:
Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a substrate comprising at least one opening, and then applying a nanotube slurry comprising at least one nanotube to the substrate, wherein the at least one nanotube is substantially placed within the at least one opening.
Public/Granted literature
- US20060141222A1 Introducing nanotubes in trenches and structures formed thereby Public/Granted day:2006-06-29
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