Method for forming semiconductor devices with active silicon height variation

Invention Grant

US07666735B1 Method for forming semiconductor devices with active silicon height variation 有权

Title translation: 用于形成活性硅高度变化的半导体器件的方法

Please log in to see more content

Patent Title: Method for forming semiconductor devices with active silicon height variation
Patent Title (中): 用于形成活性硅高度变化的半导体器件的方法
Application No.: US11053935

Application Date: 2005-02-10
Publication No.: US07666735B1

Publication Date: 2010-02-23
Inventor: David E. Brown , Hans Van Meer , Sey-Ping Sun
Applicant: David E. Brown , Hans Van Meer , Sey-Ping Sun
Applicant Address: US CA Sunnyvale
Assignee: Advanced Micro Devices, Inc.
Current Assignee: Advanced Micro Devices, Inc.
Current Assignee Address: US CA Sunnyvale
Agency: McDermott Will & Emery LLP
Main IPC: H01L21/8238
IPC: H01L21/8238

Method for forming semiconductor devices with active silicon height variation

Abstract:

A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

Abstract(Chinese):

在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS