Invention Grant
- Patent Title: Inductor structure
- Patent Title (中): 电感结构
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Application No.: US12196294Application Date: 2008-08-22
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Publication No.: US07667566B2Publication Date: 2010-02-23
- Inventor: Tsun-Lai Hsu , Jui-Fang Chen , Jun-Hong Ou
- Applicant: Tsun-Lai Hsu , Jui-Fang Chen , Jun-Hong Ou
- Applicant Address: TW Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01F5/00
- IPC: H01F5/00

Abstract:
An inductor structure comprising a substrate; a plurality of insulation layers on the substrate; a first spiral electric conductive coil positioned in the insulation layers to form an inductor having a first direction of magnetic field; a second spiral electric conductive coil positioned in the insulation layers to form an inductor having a second direction of magnetic field, in which, the two or more inductors are independently positioned in a same 3-D space and have a good integration.
Public/Granted literature
- US20080303623A1 Inductor structure Public/Granted day:2008-12-11
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