Invention Grant
US07671355B2 Method of fabricating a phase change memory and phase change memory
有权
制造相变存储器和相变存储器的方法
- Patent Title: Method of fabricating a phase change memory and phase change memory
- Patent Title (中): 制造相变存储器和相变存储器的方法
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Application No.: US12053623Application Date: 2008-03-24
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Publication No.: US07671355B2Publication Date: 2010-03-02
- Inventor: Chien-Li Kuo , Kuei-Sheng Wu , Yung-Chang Lin
- Applicant: Chien-Li Kuo , Kuei-Sheng Wu , Yung-Chang Lin
- Applicant Address: TW Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
The present invention relates to a phase change memory and a method of fabricating a phase change memory. The phase change memory includes a heater structure disposed on a phase change material pattern, wherein the heater structure is in a tapered shape with a bottom portion contacting the phase change material pattern. The fabrication of the phase change memory is compatible with the fabrication of logic devices, and accordingly an embedded phase change memory can be fabricated.
Public/Granted literature
- US20090236583A1 Method of fabricating a phase change memory and phase change memory Public/Granted day:2009-09-24
Information query
IPC分类:
