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US07674149B2 Method for fabricating field emitters by using laser-induced re-crystallization 有权
通过使用激光再结晶制造场致发射体的方法

Method for fabricating field emitters by using laser-induced re-crystallization
Abstract:
Methods are provided for fabricating field emitters by using laser-induced re-crystallization. A substrate is first provided on which a silicon-containing layer is formed. A plurality of extrusive tips are thereafter formed to be extruded from the surface of the silicon-containing layer by using laser-induced re-crystallization. The methods of the laser-induced re-crystallization include a step of subjecting the overall or partial silicon-containing layer to an energy source, either unpatterned or patterned.
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