Invention Grant
US07674149B2 Method for fabricating field emitters by using laser-induced re-crystallization
有权
通过使用激光再结晶制造场致发射体的方法
- Patent Title: Method for fabricating field emitters by using laser-induced re-crystallization
- Patent Title (中): 通过使用激光再结晶制造场致发射体的方法
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Application No.: US11111573Application Date: 2005-04-21
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Publication No.: US07674149B2Publication Date: 2010-03-09
- Inventor: Yu-Cheng Chen
- Applicant: Yu-Cheng Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Alston & Bird LLP
- Main IPC: H01J9/00
- IPC: H01J9/00 ; H01J9/02

Abstract:
Methods are provided for fabricating field emitters by using laser-induced re-crystallization. A substrate is first provided on which a silicon-containing layer is formed. A plurality of extrusive tips are thereafter formed to be extruded from the surface of the silicon-containing layer by using laser-induced re-crystallization. The methods of the laser-induced re-crystallization include a step of subjecting the overall or partial silicon-containing layer to an energy source, either unpatterned or patterned.
Public/Granted literature
- US20060240734A1 Method for fabricating field emitters by using laser-induced re-crystallization Public/Granted day:2006-10-26
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