The present invention provides a method of fabricating a hinge. First, a wafer is provided, and a hinge region and at least two through regions are defined on the wafer. The wafer in the hinge region is partially removed from a bottom surface of the wafer. Subsequently, the wafer in the through regions is completely removed from a top surface of the wafer, and the hinge is formed. Thereafter, a wafer level test is performed on the hinge of the wafer. Next, an etching process is performed to adjust the shape of the hinge. According to the method of the present invention, the thickness of the hinge is no longer limited by the thickness of the wafer, and the hinge can accept the wafer level test.