Invention Grant
- Patent Title: Semiconductor device with gel-type thermal interface material
- Patent Title (中): 具有凝胶型热界面材料的半导体器件
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Application No.: US11846618Application Date: 2007-08-29
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Publication No.: US07678615B2Publication Date: 2010-03-16
- Inventor: Maxat Touzelbaev , Raj Master , Frank Kuechenmeister
- Applicant: Maxat Touzelbaev , Raj Master , Frank Kuechenmeister
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Timothy M. Honeycutt
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L21/48 ; H01L21/44 ; H01L23/34 ; H01L23/10 ; H01L23/12

Abstract:
Various methods and apparatus for establishing a thermal pathway for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes forming a metal layer on a semiconductor chip and forming a gel-type thermal interface material layer on the metal layer. A solvent and a catalyst material are applied to the metal layer prior to forming the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.
Public/Granted literature
- US20090057877A1 Semiconductor Device with Gel-Type Thermal Interface Material Public/Granted day:2009-03-05
Information query
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