Invention Grant
US07678615B2 Semiconductor device with gel-type thermal interface material 有权
具有凝胶型热界面材料的半导体器件

Semiconductor device with gel-type thermal interface material
Abstract:
Various methods and apparatus for establishing a thermal pathway for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes forming a metal layer on a semiconductor chip and forming a gel-type thermal interface material layer on the metal layer. A solvent and a catalyst material are applied to the metal layer prior to forming the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.
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