Invention Grant
US07678699B2 Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction
有权
通过使用硅烷反应形成用于铜金属化层的绝缘覆盖层的方法
- Patent Title: Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction
- Patent Title (中): 通过使用硅烷反应形成用于铜金属化层的绝缘覆盖层的方法
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Application No.: US11531084Application Date: 2006-09-12
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Publication No.: US07678699B2Publication Date: 2010-03-16
- Inventor: Joerg Hohage , Matthias Lehr , Volker Kahlert
- Applicant: Joerg Hohage , Matthias Lehr , Volker Kahlert
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102005057057 20051130
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A new technique is disclosed in which a barrier/capping layer for a copper-based metal line is formed by using a thermal-chemical treatment with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma-based deposition of silicon nitride and/or silicon carbon nitride. The thermal-chemical treatment is performed on the basis of an ammonium/nitrogen mixture in the absence of any plasma ambient.
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