Invention Grant
- Patent Title: Insulation film formation device
- Patent Title (中): 绝缘膜形成装置
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Application No.: US10533932Application Date: 2003-11-07
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Publication No.: US07681521B2Publication Date: 2010-03-23
- Inventor: Takahiro Nishibayashi
- Applicant: Takahiro Nishibayashi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2002-333927 20021118; JP2002-333928 20021118
- International Application: PCT/JP03/14176 WO 20031107
- International Announcement: WO2004/047161 WO 20040603
- Main IPC: H01L21/306
- IPC: H01L21/306 ; B05C11/00 ; B05B13/00 ; B05B13/04

Abstract:
An SOD system (100A) comprises a process block (8) for performing a prescribed processing so as to form an insulating film on a wafer W, a carrier block (7) for transferring the wafer W from the outside into the process block (8), a sub-transfer mechanism (12) for transferring the substrate W between the process block (8) and the carrier block (7), and a main transfer mechanism (15). A process tower (T1) prepared by stacking one upon the other a plurality of process units for performing a series of processing for forming an insulating film on the wafer W is arranged detachable from the process block (8).
Public/Granted literature
- US20060011133A1 Insulation film formation device Public/Granted day:2006-01-19
Information query
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