Invention Grant
- Patent Title: Method for controlled density growth of carbon nanotubes
- Patent Title (中): 碳纳米管的受控密度生长方法
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Application No.: US11381981Application Date: 2006-05-05
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Publication No.: US07687981B2Publication Date: 2010-03-30
- Inventor: Farzad Parsapour
- Applicant: Farzad Parsapour
- Applicant Address: US NJ Bridgewater
- Assignee: Brother International Corporation
- Current Assignee: Brother International Corporation
- Current Assignee Address: US NJ Bridgewater
- Agency: Darby & Darby
- Main IPC: H01J1/304
- IPC: H01J1/304 ; H01J1/30 ; H01J9/00

Abstract:
Described is a method for preparation of carbon nanotubes (CNTs) with medium to low-site density growth for use in field emission devices (FEDs). The method involves the deposition of a non-catalytic metal layer (interlayer), preferably a metallic conductor, onto the surface of a substrate, prior to the deposition of a catalytic layer (overlayer). The interlayer allows for only partial (sparse) growth of CNTs on the substrate, and helps to prevent resist layer “lift-off” when photolithographic processing is employed.
Public/Granted literature
- US20070259128A1 METHOD FOR CONTROLLED DENSITY GROWTH OF CARBON NANOTUBES Public/Granted day:2007-11-08
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