Invention Grant
- Patent Title: Radiation emitting semi-conductor element
- Patent Title (中): 辐射发射半导体元件
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Application No.: US10567883Application Date: 2004-07-30
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Publication No.: US07692204B2Publication Date: 2010-04-06
- Inventor: Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
- Applicant: Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
- Applicant Address: DE Munich
- Assignee: OSRAM GmbH
- Current Assignee: OSRAM GmbH
- Current Assignee Address: DE Munich
- Agency: Fish & Richardson P.C.
- Priority: DE10339983 20030829; DE10346605 20031007
- International Application: PCT/DE2004/001708 WO 20040730
- International Announcement: WO2005/024961 WO 20050317
- Main IPC: H01L29/08
- IPC: H01L29/08

Abstract:
A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).
Public/Granted literature
- US20070181894A1 Radiation emitting semi-conductor element Public/Granted day:2007-08-09
Information query
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