公开(公告)号：US09497826B2

公开(公告)日：2016-11-15

申请号：US13702347

申请日：2011-04-13

Applicant: Norwin von Malm ,  Hubert Maiwald ,  Robert Kraus ,  Patrick Rode ,  Ralph Wirth

Inventor： Norwin von Malm ,  Hubert Maiwald ,  Robert Kraus ,  Patrick Rode ,  Ralph Wirth

IPC: H05B37/00 ,  F21V23/02 ,  H01L25/075 ,  H01L41/04 ,  H01L41/107 ,  H05B33/08 ,  F21V29/70 ,  F21V29/74 ,  F21V3/00 ,  H01L33/08 ,  H01L33/62 ,  H01L33/64 ,  F21V29/89 ,  F21Y101/00

CPC classification number: H05B37/00 ,  F21K9/232 ,  F21K9/233 ,  F21V3/00 ,  F21V23/026 ,  F21V29/70 ,  F21V29/74 ,  F21V29/89 ,  F21Y2101/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/62 ,  H01L33/647 ,  H01L41/044 ,  H01L41/107 ,  H01L2224/48091 ,  H01L2224/73265 ,  H05B33/0806 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting diode arrangement includes a piezoelectric transformer having at least one output connection position, and a high-voltage light-emitting diode including a high-voltage light-emitting diode chip including at least two active regions connected in series with one another, wherein the high-voltage light-emitting diode is electrically connected to the output connection position of the piezo transformer.

Abstract translation: 发光二极管装置包括具有至少一个输出连接位置的压电变压器和包括高压发光二极管芯片的高压发光二极管，所述高压发光二极管芯片包括彼此串联连接的至少两个有源区域， 其中高压发光二极管电连接到压电变压器的输出连接位置。

公开(公告)号：US09437792B2

公开(公告)日：2016-09-06

申请号：US14347293

申请日：2012-08-30

Applicant: Andreas Dobner ,  Joerg Sorg ,  Ralph Wirth

Inventor： Andreas Dobner ,  Joerg Sorg ,  Ralph Wirth

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/60 ,  H01L2224/48137 ,  H01L2924/3025 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes: at least one optoelectronic semiconductor chip, a leadframe having one a plurality of leadframe parts, at least two electrical connection means via which the semiconductor chip is electrically contact-connected to the leadframe, and a potting body, which is fitted to the leadframe and mechanically supports the latter, wherein the one or at least one of the leadframe parts is provided with a reflective coating at a top side, the semiconductor chip is fitted on the reflective coating at the top side, the leadframe includes at least two contact locations, onto which the connection means are directly fitted, and the contact locations are formed from a material that is different from the reflective coating.

Abstract translation: 光电子半导体部件包括：至少一个光电子半导体芯片，具有一个多个引线框架部件的引线框架，至少两个电连接装置，半导体芯片通过该电连接装置电接触连接到引线框架，以及灌封体 装配到引线框架并机械地支撑后者，其中引线框架部件中的一个或至少一个在顶侧设置有反射涂层，半导体芯片安装在顶侧的反射涂层上，引线框架包括在 至少两个接触位置，连接装置直接配合到其上，并且接触位置由与反射涂层不同的材料形成。

公开(公告)号：US09097392B2

公开(公告)日：2015-08-04

申请号：US13499524

申请日：2010-07-15

Applicant: Ralph Peter Bertram ,  Ralph Wirth ,  Jan Marfeld

Inventor： Ralph Peter Bertram ,  Ralph Wirth ,  Jan Marfeld

IPC: H01L33/50 ,  F21K99/00 ,  F21Y101/02 ,  F21Y113/00 ,  H01L25/075

CPC classification number: F21K9/135 ,  F21K9/232 ,  F21K9/60 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/501 ,  H01L33/502 ,  H01L33/504 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A mixed light source comprising: a first radiation source, which emits radiation in the red spectral range; an excitation source, which contains a III-V semiconductor material; and a conversion substance, which, during the operation of the mixed light source, converts the radiation of the excitation source at least partly into radiation whose color locus in the CIE chromaticity diagram lies within a polygon spanned by the coordinates (0.1609; 0.497), (0.35; 0.6458), (0.558; 0.444) and (0.453; 0.415).

Abstract translation: 一种混合光源，包括：发射红色光谱范围的辐射的第一辐射源; 包含III-V族半导体材料的激发源; 以及转换物质，其在混合光源的操作期间至少部分地将激发源的辐射转换成其CIE色度图中的颜色轨迹位于由坐标（0.1609; 0.497）所跨越的多边形内的辐射， （0.35; 0.6458），（0.558; 0.444）和（0.453; 0.415）。

公开(公告)号：US09082944B2

公开(公告)日：2015-07-14

申请号：US13817273

申请日：2011-08-04

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L33/58 ,  H01L33/44 ,  G02B5/02 ,  H01L33/56

CPC classification number: H01L33/58 ,  G02B5/0278 ,  H01L33/44 ,  H01L33/56 ,  H01L2933/0091

Abstract: An optoelectronic semiconductor component includes one or a plurality of optoelectonic semiconductor chips, and at least one scattering body including a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material and which is disposed downstream of at least one of the semiconductor chips, wherein, in the event of a temperature change, a difference in refractive index between the matrix material and the particle material changes, and the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15.

Abstract translation: 光电子半导体部件包括一个或多个光电半导体芯片，以及至少一个散射体，其包括辐射透射基体材料，并且在其中嵌入由粒子材料构成的散射粒子，并且设置在至少一个半导体芯片的下游 其中，在温度变化的情况下，基体材料与粒子材料的折射率差发生变化，在300K的温度下，基体材料与粒子材料的折射率差在0.15以下 。

公开(公告)号：US08847247B2

公开(公告)日：2014-09-30

申请号：US13394097

申请日：2010-08-06

Applicant: Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L29/18 ,  H01L33/44 ,  H01L23/00 ,  H01L33/62 ,  H01L25/075 ,  H01L33/50

CPC classification number: H01L33/44 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: An optoelectronic module is provided which comprises a first semiconductor body (2) with a radiation exit side (2a) on which an electrical connection region (21, 22) is arranged. The first semiconductor body (2) is arranged with its side opposite the radiation exit side (2a) on a carrier (1). An insulation material (3) is arranged on the carrier (1) laterally next to the first semiconductor body (2), which material forms a fillet and adjoins the semiconductor body (2) form-fittingly. An insulation layer (4) is arranged at least in places on the first semiconductor body (2) and the insulation material (3), on which layer a planar conductive structure is arranged for planar contacting of the first semiconductor body (2), which conductive structure is electrically conductively connected with the electrical connection region (21, 22). A method of producing such an optoelectronic module is furthermore provided.

Abstract translation: 提供了一种光电模块，其包括具有辐射出射侧（2a）的第一半导体本体（2），电连接区域（21,22）布置在其上。 第一半导体本体（2）的一侧与辐射出口侧（2a）相对设置在载体（1）上。 绝缘材料（3）在第一半导体本体（2）的横向方向上布置在载体（1）上，该材料形成一个圆角并且与半导体本体（2）形成适当的连接。 绝缘层（4）至少布置在第一半导体本体（2）和绝缘材料（3）上的位置上，其上布置有用于第一半导体主体（2）的平面接触的平面导电结构的层， 导电结构与电连接区域（21,22）导电连接。 此外还提供了制造这种光电子模块的方法。

公开(公告)号：US08835937B2

公开(公告)日：2014-09-16

申请号：US10588167

申请日：2005-02-18

Applicant: Ralph Wirth ,  Herbert Brunner ,  Stefan Illek ,  Dieter Eissler

Inventor： Ralph Wirth ,  Herbert Brunner ,  Stefan Illek ,  Dieter Eissler

IPC: H01L33/00 ,  H01L31/0224 ,  H01L33/38

CPC classification number: H01L31/022408 ,  H01L31/022416 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/382 ,  H01L2224/16225

Abstract: Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.

Abstract translation: 公开了一种光电子部件（1），其包括具有有源区（400）和横向主延伸方向的半导体功能区（2），所述半导体功能区包括至少一个开口（9,27,29） 并且在所述开口的区域中设置有至少在所述开口的一个子区域中与所述活性区电隔离（10）的连接导体材料（8）。 进一步公开的是制造这种光电子部件的方法和包括多个光电子部件的器件。 组件和设备可以完全在晶片上生产。

公开(公告)号：US08723192B2

公开(公告)日：2014-05-13

申请号：US13320304

申请日：2010-07-19

Applicant: Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L29/18

CPC classification number: H01L33/0079 ,  H01L23/3107 ,  H01L23/3185 ,  H01L25/042 ,  H01L25/0753 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/02327 ,  H01L31/1892 ,  H01L33/483 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method for producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier; shaping a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body covers all side areas of the at least one optoelectronic semiconductor chip, and wherein a surface facing away from the carrier at the top side and/or a surface facing the carrier at the underside of the at least one semiconductor chip remains substantially free of the shaped body or is exposed, and removing the carrier.

Abstract translation: 一种光电子半导体部件的制造方法，包括提供载体; 在载体的顶侧布置至少一个光电子半导体芯片; 在所述至少一个光电半导体芯片周围成形成形体，其中所述成形体覆盖所述至少一个光电半导体芯片的所有侧面区域，并且其中，在顶侧处背离所述载体的表面和/或面向所述至少一个光电半导体芯片的表面 在至少一个半导体芯片的下侧的载体保持基本上没有成形体或暴露，并且移除载体。

公开(公告)号：US08624269B2

公开(公告)日：2014-01-07

申请号：US12989470

申请日：2009-04-09

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L27/15

CPC classification number: H01L33/08 ,  H01L27/153 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a space, with a second active zone which extends parallel to the first active zone in a different plane, and a compensating layer, which is located in the second region at the level of the first active zone, the compensating layer not containing any semiconductor material.

Abstract translation: 本文描述了一种辐射发射薄膜半导体芯片，其包括具有第一有源区的第一区域和与第一区域横向隔开一空间的第二区域，第二活性区域平行于第一活性区域延伸， 不同的平面和补偿层，其位于第一有源区的电平的第二区域中，补偿层不包含任何半导体材料。

公开(公告)号：US20120193657A1

公开(公告)日：2012-08-02

申请号：US13389661

申请日：2010-08-05

Applicant: Norwin von Malm ,  Ralph Wirth

Inventor： Norwin von Malm ,  Ralph Wirth

IPC: H01L33/50

CPC classification number: H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/49107 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor component includes a light-emitting diode chip with at least two emission regions that can be operated independently of each other and at least two differently designed conversion elements. During operation of the light-emitting diode chips each of the emission regions is provided for generating electromagnetic primary radiation. Each emission region has an emission surface by which at least part of the primary radiation is decoupled from the light-emitting diode chip. The conversion elements are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation. The differently designed conversion elements are disposed downstream of different emission surfaces. An electric resistance element is connected in series or parallel to at least one of the emission regions.

Abstract translation: 辐射发射半导体部件包括具有至少两个发射区域的发光二极管芯片，所述至少两个发射区域可以彼此独立地操作和至少两个不同设计的转换元件。 在发光二极管芯片的操作期间，每个发射区域被设置用于产生电磁一次辐射。 每个发射区域具有发射表面，通过该发射表面，至少一部分初级辐射与发光二极管芯片分离。 提供转换元件用于吸收至少一部分初级辐射并用于重新发射次级辐射。 不同设计的转换元件设置在不同发射表面的下游。 电阻元件串联或并联连接至至少一个发射区域。

公开(公告)号：US08203160B2

公开(公告)日：2012-06-19

申请号：US12443155

申请日：2007-09-19

Applicant: Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

Inventor： Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

IPC: H01L33/00

Abstract: An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.