Invention Grant
- Patent Title: Methods of forming capacitors
- Patent Title (中): 形成电容器的方法
-
Application No.: US12114129Application Date: 2008-05-02
-
Publication No.: US07696056B2Publication Date: 2010-04-13
- Inventor: Mark Kiehlbauch , Kevin Shea
- Applicant: Mark Kiehlbauch , Kevin Shea
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/108
Abstract:
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode.
Public/Granted literature
- US20090275187A1 METHODS OF FORMING CAPACITORS Public/Granted day:2009-11-05
Information query
IPC分类:
