公开(公告)号：US20110259820A1

公开(公告)日：2011-10-27

申请号：US12765170

申请日：2010-04-22

Applicant: Kevin Shea Songer ,  Rinaldo Joseph DiLoreto, III

Inventor： Kevin Shea Songer ,  Rinaldo Joseph DiLoreto, III

IPC: C02F3/32 ,  A01G31/02

CPC classification number: A01G9/00 ,  C02F3/103 ,  C02F3/327 ,  Y02W10/15 ,  Y02W10/18 ,  Y02W10/37

Abstract: Embodiments of the invention provide a buoyant plant habitat for removing excess nutrients and other pollutants from a body of water and thereby remediating the water. The buoyant plant habitat may be used to remediate any suitable body of water, including ponds and lakes (both natural and manmade), streams and rivers, and stormwater, wastewater or drainage ponds. The buoyant plant habitat comprises a rigid, non-biodegradable grid structure into which a plurality of aquatic plants is placed. As the plants grow, they take up excess nutrients (nitrogen and phosphorous) and other pollutants from the water. From time to time, the top portions of the plants are removed by cutting. This cutting of the permanently removes the excess nutrients that have been taken up and stored by the cut portion of the plants. The cut plant matter may then be composted or otherwise disposed of.

Abstract translation: 本发明的实施方案提供了一种浮力植物栖息地，用于从水体中除去多余的营养物和其它污染物，从而补救水分。 漂浮的植物栖息地可用于修复任何合适的水体，包括池塘和湖泊（天然和人造），溪流和河流以及雨水，废水或排水池。 漂浮的植物栖息地包括刚性的，不可生物降解的格栅结构，多个水生植物放置在其中。 随着植物的生长，它们从水中摄取过量的营养物（氮和磷）和其他污染物。 不时地，通过切割去除植物的顶部。 这种切割永久性地除去由植物的切割部分摄取和储存的多余营养物质。 然后可以将切割的植物物质堆肥或以其他方式处置。

公开(公告)号：US20100159667A1

公开(公告)日：2010-06-24

申请号：US12716395

申请日：2010-03-03

Applicant: Mark Kiehlbauch ,  Kevin Shea

Inventor： Mark Kiehlbauch ,  Kevin Shea

IPC: H01L21/02

CPC classification number: H01L28/91 ,  H01L27/10852 ,  H01L27/10894

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode

Abstract translation: 形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。 在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。 屏蔽层在开口内蚀刻。 在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。 与第一电容器电极可操作地形成电容器电介质和第二电容器电极

公开(公告)号：US20100025362A1

公开(公告)日：2010-02-04

申请号：US12575263

申请日：2009-10-07

Applicant: Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

Inventor： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

IPC: C23F1/00 ,  B32B37/00 ,  H01L21/02

CPC classification number: H01L27/10852 ,  H01L27/10894 ,  H01L28/91 ,  Y10T156/10

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

Abstract translation: 形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。 在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。 屏蔽包括氮化物。 通过包含氮化物的护罩在开口内进行蚀刻。 在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。 与第一电容器电极可操作地形成电容器电介质和第二电容器电极。 考虑了其他方面和实现。

公开(公告)号：US07541635B2

公开(公告)日：2009-06-02

申请号：US11490770

申请日：2006-07-21

Applicant: Kevin Torek ,  Kevin Shea ,  Niraj B. Rana ,  Zhiping Yin

Inventor： Kevin Torek ,  Kevin Shea ,  Niraj B. Rana ,  Zhiping Yin

IPC: H01L27/108 ,  H01L29/94

CPC classification number: H01L27/10852 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of memory containers is in contact with the collar material along a side of a second memory container. An opening exists between the collar material along a corner of the memory container and the collar material along a corner of a third memory container.

Abstract translation: 在一个实施例中，一种方法包括在多个存储器容器之间选择性地沉积套环材料。 沿着存储容器数量的第一存储容器的一侧的套环材料沿着第二存储容器的侧面与套环材料接触。 在沿着第一存储容器的角部的套环材料和沿着第三存储容器的角部的套环材料之间存在开口。

公开(公告)号：US20070178705A1

公开(公告)日：2007-08-02

申请号：US11726507

申请日：2007-03-22

Applicant: Kevin Shea

Inventor： Kevin Shea

IPC: B44C1/22 ,  H01L21/302

CPC classification number: H01L21/32134 ,  B81C1/00595 ,  H01L21/76838 ,  H01L27/1052

Abstract: The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electromechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.

公开(公告)号：US20070131995A1

公开(公告)日：2007-06-14

申请号：US11678173

申请日：2007-02-23

Applicant: Kevin Shea

Inventor： Kevin Shea

IPC: H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC classification number: H01L28/75 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91 ,  Y10S257/915

Abstract: Bottom electrodes of memory cell capacitors are recessed to prevent electrical shorts between neighboring memory cells. A partially fabricated memory cell capacitor has a bottom electrode comprising titanium nitride (TiN) and hemispherical grained (HSG) silicon. The container housing the capacitor is filled with photoresist and then planarized. The TiN layer is then selectively recessed with a peroxide mixture and subsequently the HSG silicon layer is recessed using tetramethyl ammoniumhydroxide. Thus, the bottom electrode is recessed below the level of particles which may overlie the memory cell capacitors and cause shorts by contacting the bottom electrode.

Abstract translation: 存储单元电容器的底部电极被凹入以防止相邻存储单元之间的电短路。 部分制造的存储单元电容器具有包括氮化钛（TiN）和半球形颗粒（HSG）硅的底部电极。 容纳电容器的容器用光致抗蚀剂填充，然后平坦化。 然后用过氧化物混合物选择性地凹入TiN层，随后使用四甲基氢氧化铵使HSG硅层凹陷。 因此，底部电极凹陷在可能覆盖存储单元电容器的颗粒水平之下，并且通过接触底部电极而引起短路。

公开(公告)号：US20070117335A1

公开(公告)日：2007-05-24

申请号：US11625130

申请日：2007-01-19

Applicant: Gurtej Sandhu ,  Kevin Shea ,  Chris Hill ,  Kevin Torek

Inventor： Gurtej Sandhu ,  Kevin Shea ,  Chris Hill ,  Kevin Torek

IPC: H01L21/336

CPC classification number: H01L28/91 ,  H01L27/10852

Abstract: Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides of the structural layer. The structural layer is removed, creating an isolated lower electrode. The lower electrode can be covered with a capacitor dielectric and upper electrode to form a double-sided container capacitor.

Abstract translation: 使用牺牲层形成双面容器电容器。 在结构层的凹部内形成牺牲层。 下部电极形成在凹部内。 去除牺牲层以产生允许接近结构层的侧面的空间。 去除结构层，形成隔离的下电极。 下电极可以用电容器电介质和上电极覆盖以形成双面容器电容器。

公开(公告)号：US20060261395A1

公开(公告)日：2006-11-23

申请号：US11490770

申请日：2006-07-21

Applicant: Kevin Torek ,  Kevin Shea ,  Niraj Rana ,  Zhiping Yin

Inventor： Kevin Torek ,  Kevin Shea ,  Niraj Rana ,  Zhiping Yin

IPC: H01L29/94

CPC classification number: H01L27/10852 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of memory containers is in contact with the collar material along a side of a second memory container. An opening exists between the collar material along a corner of the first memory container and the collar material along a corner of a third memory container.

公开(公告)号：US20060260646A1

公开(公告)日：2006-11-23

申请号：US11493053

申请日：2006-07-26

Applicant: Niraj Rana ,  Kevin Shea

Inventor： Niraj Rana ,  Kevin Shea

IPC: C23G1/00 ,  B08B3/00 ,  B08B7/00

CPC classification number: H01L21/02063 ,  B08B3/08 ,  C23F1/32 ,  C23F4/00

Abstract: A method of removing a mask and addressing interfacial carbon chemisbored in a semiconductor wafer starts with placing the semiconductor wafer into a dry strip chamber. The dry stripping process is performed to remove the mask on the semiconductor wafer. The semiconductor wafer is then subjected to a cleaning solution to perform a cleaning process to remove particles on the surface of the semiconductor wafer and to address the interfacial carbon. The cleaning solution being either water containing ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4).

Abstract translation: 在半导体晶片中化学处理掩模和去除界面碳的方法开始于将半导体晶片放入干燥条形室中。 执行干燥剥离处理以去除半导体晶片上的掩模。 然后对半导体晶片进行清洁溶液以进行清洁处理以去除半导体晶片的表面上的颗粒并解决界面碳。 清洁溶液是含臭氧（O 3 3 N）和氨（NH 3）的水，或热磷酸（H 3 N 3） PO 4）。

公开(公告)号：US07109089B2

公开(公告)日：2006-09-19

申请号：US10788977

申请日：2004-02-27

Applicant: Kevin Torek ,  Kevin Shea ,  Niraj B. Rana ,  Zhiping Yin

Inventor： Kevin Torek ,  Kevin Shea ,  Niraj B. Rana ,  Zhiping Yin

IPC: H01L21/20

CPC classification number: H01L27/10852 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of memory containers is in contact with the collar material along a side of a second memory container. An opening exists between the collar material along a corner of the first memory container and the collar material along a corner of a third memory container.