Invention Grant
- Patent Title: Method of fabricating intergrated circuit chip
- Patent Title (中): 集成电路芯片的制造方法
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Application No.: US12126939Application Date: 2008-05-26
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Publication No.: US07696066B2Publication Date: 2010-04-13
- Inventor: Yan-Hsiu Liu
- Applicant: Yan-Hsiu Liu
- Applicant Address: TW Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/46
- IPC: H01L21/46

Abstract:
A method of manufacturing an integrated circuit (IC) chip is provided. The method includes the following steps. First, a substrate is provided. The substrate is divided into an internal region and an external region by a die seal ring region. A number of circuit units are then formed in the internal region on the substrate. Thereafter, a dielectric layer is formed over the substrate, interconnects are formed in the dielectric layer within the internal region, and a number of bonding pad structures are formed in the dielectric layer within the external region. Finally, a cutting process is performed along a number of scribed lines on the substrate to form a number of chips. The bonding pad structures are exposed at the sides of each chip.
Public/Granted literature
- US20080233737A1 METHOD OF FABRICATING INTERGRATED CIRCUIT CHIP Public/Granted day:2008-09-25
Information query
IPC分类: