Invention Grant
US07696093B2 Methods for forming copper interconnects for semiconductor devices
有权
用于形成用于半导体器件的铜互连的方法
- Patent Title: Methods for forming copper interconnects for semiconductor devices
- Patent Title (中): 用于形成用于半导体器件的铜互连的方法
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Application No.: US12190428Application Date: 2008-08-12
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Publication No.: US07696093B2Publication Date: 2010-04-13
- Inventor: Christian A. Witt
- Applicant: Christian A. Witt
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Methods for forming copper interconnects for semiconductor devices are provided. In an exemplary embodiment, a method for forming a copper interconnect comprises depositing copper into a trench formed in a dielectric material overlying a semiconductor material. A force is applied to the semiconductor material and stress is induced within the copper deposited in the trench. Recrystallization and grain growth are effected within the copper and the stress is removed.
Public/Granted literature
- US20100041230A1 METHODS FOR FORMING COPPER INTERCONNECTS FOR SEMICONDUCTOR DEVICES Public/Granted day:2010-02-18
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