Invention Grant
- Patent Title: High-throughput printing of semiconductor precursor layer from nanoflake particles
- Patent Title (中): 从纳米薄片颗粒中高通量印制半导体前体层
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Application No.: US11361433Application Date: 2006-02-23
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Publication No.: US07700464B2Publication Date: 2010-04-20
- Inventor: Matthew R. Robinson , Jeroen K. J. Van Duren , Craig Leidholm , Brian M. Sager
- Applicant: Matthew R. Robinson , Jeroen K. J. Van Duren , Craig Leidholm , Brian M. Sager
- Applicant Address: US CA San Jose
- Assignee: Nanosolar, Inc.
- Current Assignee: Nanosolar, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20 ; B05D5/12

Abstract:
Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.
Public/Granted literature
- US20070163637A1 High-throughput printing of semiconductor precursor layer from nanoflake particles Public/Granted day:2007-07-19
Information query
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