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    High-throughput printing of semiconductor precursor layer from microflake particles
    1.
    发明授权
    High-throughput printing of semiconductor precursor layer from microflake particles 有权
    从微片颗粒高通量印制半导体前体层

    公开(公告)号：US08846141B1

    公开(公告)日：2014-09-30

    申请号：US12175945

    申请日：2008-07-18

    Applicant: Matthew R. Robinson ,  Jeroen K. J. Van Duren ,  Craig Leidholm ,  Brian M. Sager

    Inventor： Matthew R. Robinson ,  Jeroen K. J. Van Duren ,  Craig Leidholm ,  Brian M. Sager

    IPC: B05D3/00

    CPC classification number: H01L31/0322 ,  H01L31/06 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.

    Abstract translation: 提供了用于从微片微粒高通量印刷半导体前体层的方法和装置。 在一个实施方案中，该方法包括在合适的条件下，在合适的载体中转化非平面或平面前体材料，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在沉降之后。 特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。 这些平面颗粒可以是具有高纵横比的微片。 由微片形成的所得致密膜在形成光伏器件中特别有用。

    Thin-Film Devices Formed From Solid Group IIIA Particles
    4.
    发明申请
    Thin-Film Devices Formed From Solid Group IIIA Particles 审中-公开
    由固体IIIA族颗粒形成的薄膜器件

    公开(公告)号：US20130034932A1

    公开(公告)日：2013-02-07

    申请号：US13571685

    申请日：2012-08-10

    Applicant: Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K.J. Van Duren

    Inventor： Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K.J. Van Duren

    IPC: H01L31/18

    CPC classification number: H01L31/0322 ,  Y02E10/541

    Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.

    Abstract translation: 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。 可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料 在该温度范围内为液体。 另一种材料可以是IA族材料。 可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。 上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

    THIN-FILM DEVICES FORMED FROM SOLID GROUP IIIA PARTICLES
    6.
    发明申请
    THIN-FILM DEVICES FORMED FROM SOLID GROUP IIIA PARTICLES 审中-公开
    从固体IIIA颗粒形成的薄膜装置

    公开(公告)号：US20110114182A1

    公开(公告)日：2011-05-19

    申请号：US12776353

    申请日：2010-05-07

    Applicant: Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K. J. Van Duren

    Inventor： Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K. J. Van Duren

    IPC: H01L31/0264 ,  H01L31/18

    CPC classification number: H01L31/0322 ,  Y02E10/541

    Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.

    Abstract translation: 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。 可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料 在该温度范围内为液体。 另一种材料可以是IA族材料。 可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。 上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

    Thin-Film Devices Formed From Solid Particles
    8.
    发明申请
    Thin-Film Devices Formed From Solid Particles 有权
    固体颗粒形成的薄膜器件

    公开(公告)号：US20100291758A1

    公开(公告)日：2010-11-18

    申请号：US12304683

    申请日：2007-06-12

    Applicant: Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K.J. Van Duren

    Inventor： Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K.J. Van Duren

    IPC: H01L21/18 ,  C09D1/00

    CPC classification number: H01L31/0322 ,  Y02E10/541

    Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.

    Abstract translation: 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。 可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料 在该温度范围内为液体。 另一种材料可以是IA族材料。 可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。 上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

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