Invention Grant
US07704889B2 Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements
有权
基于CD测量的气流控制在蚀刻系统中进行先进过程控制的方法和系统
- Patent Title: Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements
- Patent Title (中): 基于CD测量的气流控制在蚀刻系统中进行先进过程控制的方法和系统
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Application No.: US11538860Application Date: 2006-10-05
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Publication No.: US07704889B2Publication Date: 2010-04-27
- Inventor: Matthias Schaller , Uwe Schulze , Mathias Baranyai
- Applicant: Matthias Schaller , Uwe Schulze , Mathias Baranyai
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson
- Priority: DE102006004430 20060131
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.
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