Invention Grant
- Patent Title: Methods and systems for monitoring state of plasma chamber
- Patent Title (中): 监测等离子体室状态的方法和系统
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Application No.: US12151516Application Date: 2008-05-07
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Publication No.: US07705973B2Publication Date: 2010-04-27
- Inventor: Keun-Hee Bai , Yong-Jin Kim
- Applicant: Keun-Hee Bai , Yong-Jin Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Milles & Onello, LLP
- Priority: KR10-2007-0045570 20070510
- Main IPC: G01J3/443
- IPC: G01J3/443 ; H05H1/00

Abstract:
Provided are methods and systems for monitoring a state of a plasma chamber. In the method, an optical characteristic of plasma generated in a plasma chamber including a window is measured in a predetermined measurement wavelength band. A process status index (PSI) is extracted from the measured optical characteristic. A state of the plasma chamber is evaluated by analyzing the extracted PSI. The optical characteristic of the plasma is measured in the predetermined measurement wavelength band in which a transmittance of light passing through the window is substantially independent of a wavelength of the light.
Public/Granted literature
- US20080278721A1 Methods and systems for monitoring state of plasma chamber Public/Granted day:2008-11-13
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