Invention Grant
US07709358B2 Integrated light emitting device and photodiode with OHMIC contact
有权
集成发光器件和光电二极管与OHMIC接触
- Patent Title: Integrated light emitting device and photodiode with OHMIC contact
- Patent Title (中): 集成发光器件和光电二极管与OHMIC接触
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Application No.: US11778603Application Date: 2007-07-16
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Publication No.: US07709358B2Publication Date: 2010-05-04
- Inventor: James Guenter , James R. Biard
- Applicant: James Guenter , James R. Biard
- Applicant Address: US CA Sunnyvale
- Assignee: Finisar Corporation
- Current Assignee: Finisar Corporation
- Current Assignee Address: US CA Sunnyvale
- Agency: Workman Nydegger
- Main IPC: H01L31/20
- IPC: H01L31/20

Abstract:
Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.
Public/Granted literature
- US20070264805A1 INTEGRATED LIGHT EMITTING DEVICE AND PHOTODIODE WITH OHMIC CONTACT Public/Granted day:2007-11-15
Information query
IPC分类: