公开(公告)号：US20110096803A1

公开(公告)日：2011-04-28

申请号：US11963365

申请日：2007-12-21

Applicant: Ralph H. Johnson ,  James Guenter

Inventor： Ralph H. Johnson ,  James Guenter

IPC: H01S5/183 ,  H01L33/46

CPC classification number: H01S5/18361 ,  H01L33/0045 ,  H01L33/105 ,  H01S5/0425 ,  H01S5/18344 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3077

Abstract: An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.

Abstract translation: 用于改善传导和反射率并最小化吸收的光学装置。 该光学装置包括第一反射镜，该第一反射镜包括被设计成反射预定波长的光场的第一多个反射镜周期，其中光场具有峰值和零点。 多个反射镜周期中的每一个包括具有高载流子迁移率的第一层，具有较低载流子迁移率的第二层以及第一和第二层之间的第一组成斜面。 第一和第二层的厚度对于第一多个反射镜周期的至少一部分被建立为使得光场的零点发生在第一层内而不在组成斜坡内。 第一多个反射镜周期内的第一层的至少部分包括在光场的零点的位置处的升高的掺杂浓度。

公开(公告)号：US07709358B2

公开(公告)日：2010-05-04

申请号：US11778603

申请日：2007-07-16

Applicant: James Guenter ,  James R. Biard

Inventor： James Guenter ,  James R. Biard

IPC: H01L31/20

CPC classification number: H01S5/0425 ,  H01L27/15 ,  H01S5/0264 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18358

Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

Abstract translation: 光电器件包括集成发光器件和光电二极管。 光电子器件包括诸如垂直腔表面发射激光器（VCSEL）或谐振腔发光二极管（RCLED）的发光器件。 光电二极管也包括在光电器件中。 在发光器件和光电二极管之间是过渡区域。 至少部分过渡区域短路。 金属触点提供与发光器件和光电二极管的接触。

公开(公告)号：US20070117242A1

公开(公告)日：2007-05-24

申请号：US10486666

申请日：2002-08-12

Applicant: Michael Haji-Sheikh ,  James Biard ,  James Guenter ,  Bobby Hawkins

Inventor： Michael Haji-Sheikh ,  James Biard ,  James Guenter ,  Bobby Hawkins

IPC: H01L21/00 ,  H01L33/00

CPC classification number: G01R31/275 ,  G01R31/2831 ,  G01R31/2863 ,  G01R31/2872 ,  G01R31/2874 ,  G01R31/2884 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/423

Abstract: Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control can be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) are defined by trenches (1725) that operate as nonconductive areas (1750). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.

Abstract translation: 公开了用于向具有衬底（1720），至少一个有源层（1765）和至少一个表面层（1710）的半导体晶片（1700）提供晶片光子流控制的方法。 可以通过形成在所述晶片（1700）中形成的沟槽（1725）和/或绝缘植入物（1730）来实现光子流控制，由此有源区域（1760）由作为非导电区域（1750）的沟槽（1725）限定 ）。 还公开了半导体器件的晶片级老化（WLBI）的方法和系统。 使用WLBI方法和系统时，晶圆级的光子流量控制很重要。

公开(公告)号：US20060268954A1

公开(公告)日：2006-11-30

申请号：US11461353

申请日：2006-07-31

Applicant: Ralph Johnson ,  James Biard ,  James Guenter

Inventor： Ralph Johnson ,  James Biard ,  James Guenter

IPC: H01S5/00

CPC classification number: H01S5/18358 ,  B82Y20/00 ,  H01L33/105 ,  H01S5/18311 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3432

Abstract: Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.

Abstract translation: 制造诸如VCSEL，SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。 薄限制屏障包括具有高铝含量（例如III型材料的80％-100％）的III-V半导体材料。 相邻间隔层的铝含量低于限制屏障的铝含量。 在一个实施方案中，间隔层具有小于40％的铝含量和直接的带隙。 铝型材降低了串联电阻并提高了半导体器件的效率。

公开(公告)号：US20060239325A1

公开(公告)日：2006-10-26

申请号：US11299638

申请日：2005-12-12

Applicant: Ralph Johnson ,  James Guenter

Inventor： Ralph Johnson ,  James Guenter

IPC: H01S3/08 ,  H01S5/00

CPC classification number: H01S5/18355 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18386

Abstract: A polarization pinned vertical cavity surface emitting laser (VCSEL). A VCSEL designed to be polarization pinned includes an upper mirror. An active region is connected on the upper mirror. A lower mirror is connected to the active region. A grating layer is deposited to the upper mirror. The grating layer includes a low index of refraction layer formed by deposition on the upper mirror. The grating layer further includes a high index of refraction layer formed by deposition on the low index of refraction layer. A grating is formed into the grating layer.

Abstract translation: 偏振锁定垂直腔表面发射激光器（VCSEL）。 被设计为偏振锁定的VCSEL包括上镜。 有源区连接在上镜上。 下反射镜连接到活动区域。 光栅层沉积到上镜。 光栅层包括通过沉积在上反射镜上形成的低折射率折射率层。 光栅层还包括通过沉积在低折射率折射率层上形成的高折射率折射率层。 格栅形成光栅层。

公开(公告)号：US20060198405A1

公开(公告)日：2006-09-07

申请号：US11072192

申请日：2005-03-04

Applicant: James Guenter ,  Andre Lalonde

Inventor： James Guenter ,  Andre Lalonde

IPC: H01S3/13

CPC classification number: H01S5/0014 ,  G01J1/32 ,  G01J1/4257 ,  H01S5/06825 ,  H01S5/183

Abstract: A method of performing eye safety measurements on laser devices is disclosed. The laser is contained within a housing having a central bore. The method uses an optical detector having at least two zones to make separate measurements of both a direct power coming from the laser and an indirect power reflected off of the central bore. The first zone measuring the direct power is smaller than the second zone measuring the indirect power. The measurement of the first power is then used to adjust the power of the laser to be within a specified optical standard, such as the class 1 standard. In one exemplary embodiment, the laser is an 850 nanometer Vertical Cavity Surface Emitting Laser (VCSEL).

Abstract translation: 公开了一种在激光设备上执行眼睛安全测量的方法。 激光器包含在具有中心孔的壳体内。 该方法使用具有至少两个区域的光学检测器来对来自激光器的直接功率和从中心孔反射的间接功率进行分开的测量。 测量直接功率的第一个区域小于测量间接功率的第二个区域。 然后使用第一功率的测量来将激光器的功率调整在特定的光学标准中，例如1级标准。 在一个示例性实施例中，激光器是850纳米垂直腔面发射激光器（VCSEL）。

公开(公告)号：US20060071229A1

公开(公告)日：2006-04-06

申请号：US11118179

申请日：2005-04-29

Applicant: James Guenter

Inventor： James Guenter

IPC: H01L33/00

CPC classification number: H01S5/0264 ,  H01L25/167 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/10253 ,  H01L2924/3011 ,  H01S5/005 ,  H01S5/0201 ,  H01S5/0261 ,  H01S5/06825 ,  H01L2924/00 ,  H01L2224/48

Abstract: An optical component with integrated back monitor photodiode. The optical component includes a substrate doped with a first type dopant, such as an n-type dopant. The substrate has a trench with sloped walls. An optical source is disposed in the trench. An implant of a second type dopant, such as a p-type dopant, is in the substrate around at a least a portion of the optical source. The implant in the substrate in combination with the first type dopant in the substrate forms a diode.

Abstract translation: 具有集成后监视器光电二极管的光学部件。 光学部件包括掺杂有第一类型掺杂剂的衬底，例如n型掺杂剂。 衬底具有倾斜壁的沟槽。 光源设置在沟槽中。 第二类型掺杂剂（例如p型掺杂剂）的注入在光源的至少一部分周围的衬底中。 与衬底中的第一类型掺杂剂组合的衬底中的注入形成二极管。

公开(公告)号：US20060045409A1

公开(公告)日：2006-03-02

申请号：US11085788

申请日：2005-03-21

Applicant: Jim Tatum ,  James Guenter

Inventor： Jim Tatum ,  James Guenter

IPC: G02B6/36

CPC classification number: G02B6/3895 ,  G02B6/4201 ,  G02B6/424 ,  G02B6/4255 ,  G02B6/4257 ,  G02B6/4261 ,  G02B6/4263 ,  G02B6/4286

Abstract: Methods, apparatuses, and systems for obtaining identification information about fiber optic components and optical assemblies in a non-invasive manner. The present invention further includes test devices for receiving a fluorescent emission having a predetermined spectral signature. The spectral signature provides identification information. The identification information can describe a characteristic of an optical communication component or assembly incorporating the optical communication component.

Abstract translation: 用于以非侵入性方式获得关于光纤组件和光学组件的识别信息的方法，装置和系统。 本发明还包括用于接收具有预定光谱特征的荧光发射的测试装置。 光谱签名提供识别信息。 识别信息可以描述包含光通信部件的光通信部件或组件的特性。

公开(公告)号：US20060043278A1

公开(公告)日：2006-03-02

申请号：US11203928

申请日：2005-08-15

Applicant: Trevor Schelp ,  Ronald Chandler ,  James Guenter ,  Norman Stapleton

Inventor： Trevor Schelp ,  Ronald Chandler ,  James Guenter ,  Norman Stapleton

IPC: H01J5/02

CPC classification number: G01S17/026 ,  G01S7/4811 ,  G01S7/4813 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A vertical cavity surface emitting laser (VCSEL) operable as a signal emitter and a silicon photodetector adapted for receiving light signals co-mounted in a common canister. Also containable is a four lead header and an isolating ceramic spacer. The canister can be electrically connected to a first lead from the header. The isolating ceramic spacer is adapted for mounting of the VCSEL above the level of the photodetector within the can. The VCSEL is electrically connectable to a second and third lead from the header and the photodetector is electrically connectable to the second and a fourth lead from the header. Co-packaging of a VCSEL and photodetector in common device canisters can yield about a 20:1 contrast ratio between an object's presence in front of the sensing system. A small pattern necessary for high accuracy is provided by the system and no barrier is necessary between the emitter and detector.

Abstract translation: 可用作信号发射器的垂直腔表面发射激光器（VCSEL）和适于接收共同安装在公共罐中的光信号的硅光电探测器。 还可以容纳四个引线头和隔离陶瓷间隔件。 罐可以从头部电连接到第一引线。 隔离陶瓷间隔件适于将VCSEL安装在罐内的光电检测器的水平面上方。 VCSEL可以从头部电连接到第二和第三引线，并且光电检测器可从头部电连接到第二和第四引线。 VCSEL和光电检测器在通用器件盒中的共同封装可以在物体在感测系统之前的存在下产生大约20:1的对比度。 通过该系统提供高精度所需的小图案，并且在发射器和检测器之间不需要屏障。

公开(公告)号：US20050286586A1

公开(公告)日：2005-12-29

申请号：US11027383

申请日：2004-12-30

Applicant: James Guenter ,  Jimmy Tatum ,  James Biard

Inventor： James Guenter ,  Jimmy Tatum ,  James Biard

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/183

CPC classification number: H01S5/0264 ,  H01S5/0422 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/3095 ,  H01S2301/02

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract translation: 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明 ，并使用离子注入来降低光致发光效率。