Invention Grant
- Patent Title: Composite photoresist structure
- Patent Title (中): 复合光刻胶结构
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Application No.: US12102029Application Date: 2008-04-14
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Publication No.: US07718345B2Publication Date: 2010-05-18
- Inventor: Jui-Tsen Huang
- Applicant: Jui-Tsen Huang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/09 ; G03F7/20 ; G03F7/36 ; G03F7/48
Abstract:
A composite photoresist structure includes a first organic layer disposed over a substrate to be etched, a sacrificial layer disposed on the first organic layer, and a second organic layer disposed on the sacrificial layer. The thickness of the first organic layer and the thickness of the second organic layer are both larger than the thickness of the sacrificial layer.
Public/Granted literature
- US20080193875A1 COMPOSITE PHOTORESIST STRUCTURE Public/Granted day:2008-08-14
Information query
