Invention Grant
- Patent Title: Method and apparatus for preparing thin film
- Patent Title (中): 制备薄膜的方法和装置
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Application No.: US11719806Application Date: 2005-09-30
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Publication No.: US07727597B2Publication Date: 2010-06-01
- Inventor: Eizo Watanabe , Toshiyuki Watanabe , Masato Sone , Yoshinori Matsuoka , Hideo Miyake , Masayasu Iida
- Applicant: Eizo Watanabe , Toshiyuki Watanabe , Masato Sone , Yoshinori Matsuoka , Hideo Miyake , Masayasu Iida
- Applicant Address: JP Tokyo JP Sakai-shi JP Inzai-shi
- Assignee: Tokyo University of Agriculture & Tech.,Itec Co., Ltd.,Eizo Watanabe
- Current Assignee: Tokyo University of Agriculture & Tech.,Itec Co., Ltd.,Eizo Watanabe
- Current Assignee Address: JP Tokyo JP Sakai-shi JP Inzai-shi
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2004-337176 20041122; JP2004-337177 20041122
- International Application: PCT/JP2005/018101 WO 20050930
- International Announcement: WO2006/054393 WO 20060526
- Main IPC: B05D1/02
- IPC: B05D1/02 ; B05D5/00 ; B05D7/00 ; B28B19/00 ; C23C20/00 ; C23C28/00

Abstract:
The present invention provides a method and an apparatus for preparing a silicon-containing solid film, which can form a thin film uniformly over a wide area. Raw-material fluid comprising a silane derivative and a hydrocarbon derivative is mixed with carrier fluid comprising carbon dioxide to form a supercritical condition. Further, an active-state is produced in the raw-material fluid of the supercritical fluid by a catalytic reaction with at least one metal catalyst selected from a group consisting of platinum, tungsten, cobalt, nickel, iron or an alloy of each of them. The fluid is blown to the substrate, thereby forming a silicon-containing solid film or a hydrocarbon-containing solid film on the substrate.
Public/Granted literature
- US20080166491A1 Method And Apparatus For Preparing Thin Film Public/Granted day:2008-07-10
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