Invention Grant
US07728496B2 Electron emission device having curved surface electron emission region
失效
具有弯曲表面电子发射区域的电子发射器件
- Patent Title: Electron emission device having curved surface electron emission region
- Patent Title (中): 具有弯曲表面电子发射区域的电子发射器件
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Application No.: US11063966Application Date: 2005-02-24
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Publication No.: US07728496B2Publication Date: 2010-06-01
- Inventor: Yong-Soo Choi , Sang-Jo Lee , Byong-Gon Lee , Chun-Gyoo Lee
- Applicant: Yong-Soo Choi , Sang-Jo Lee , Byong-Gon Lee , Chun-Gyoo Lee
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2004-0012954 20040226
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J63/04

Abstract:
An electron emission device includes first and second substrates opposing one another with a gap therebetween. Cathode electrodes are formed on the first substrate. An insulation layer is formed covering the cathode electrodes and having apertures. Gate electrodes are formed on the insulation layer and have apertures at locations corresponding to the locations of the apertures of the insulation layer so as to expose the cathode electrodes. Electron emission regions are formed in the apertures on the cathode electrodes. An anode electrode is formed on the second substrate. An outer surface of the electron emission regions is formed with a shape similar to a shape of equipotential lines formed when there is no electron emission region in the apertures, and predetermined drive voltages are applied to the electrodes.
Public/Granted literature
- US20050189869A1 Electron emission device Public/Granted day:2005-09-01
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