Invention Grant
- Patent Title: RF MEMS switch and method for fabricating the same
- Patent Title (中): RF MEMS开关及其制造方法
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Application No.: US11396573Application Date: 2006-04-04
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Publication No.: US07728703B2Publication Date: 2010-06-01
- Inventor: Jong-seok Kim , Sang-wook Kwon , Dong-kyun Kim , Che-heung Kim , Sang-hun Lee , Young-tack Houng , Chang-seung Lee , In-sang Song
- Applicant: Jong-seok Kim , Sang-wook Kwon , Dong-kyun Kim , Che-heung Kim , Sang-hun Lee , Young-tack Houng , Chang-seung Lee , In-sang Song
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2005-0111380 20051121
- Main IPC: H01P1/10
- IPC: H01P1/10 ; H01H11/04 ; H01H9/00 ; H01H57/00
Abstract:
An RF MEMS switch and a method for fabricating the same are disclosed, in which the RF MEMS device is down driven at a low voltage using a piezoelectric effect. The RF MEMS switch includes a substrate provided with RF signal lines and a cavity, a cantilever positioned on the cavity, having one end fixed to the substrate, and a contact pad connecting the RF signal lines with the cantilever in contact with the RF signal lines when the cantilever is down driven.
Public/Granted literature
- US20070115081A1 RF MEMS switch and method for fabricating the same Public/Granted day:2007-05-24
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