Invention Grant
US07732009B2 Method of cleaning reaction chamber, method of forming protection film and protection wafer
有权
清洗反应室的方法，形成保护膜和保护晶片的方法
- Patent Title: Method of cleaning reaction chamber, method of forming protection film and protection wafer
- Patent Title (中): 清洗反应室的方法，形成保护膜和保护晶片的方法
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Application No.: US11535072Application Date: 2006-09-26
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Publication No.: US07732009B2Publication Date: 2010-06-08
- Inventor: Chih-Jen Mao , Chun-Hung Hsia , Ta-Ching Yang , Chun-Cheng Yu , Chien-Fu Chu , Kuo-Wei Yang , Chun-Han Chuang , Hui-Shen Shih
- Applicant: Chih-Jen Mao , Chun-Hung Hsia , Ta-Ching Yang , Chun-Cheng Yu , Chien-Fu Chu , Kuo-Wei Yang , Chun-Han Chuang , Hui-Shen Shih
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: C23C16/00
- IPC: C23C16/00 ; B08B9/00 ; B05D7/22
Abstract:
A method of cleaning a reaction chamber having a wafer holder is provided. First, the reaction chamber is cleaned by a cleaning gas. Next, a protection film is formed on the inner surface of the reaction chamber, wherein a gap is formed between the protection wafer and the wafer holder, and a cooling gas is guided therebetween simultaneously.
Public/Granted literature
- US20080075852A1 METHOD OF CLEANING REACTION CHAMBER, METHOD OF FORMING PROTECTION FILM AND PROTECTION WAFER Public/Granted day:2008-03-27
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