Invention Grant
- Patent Title: Electron-emitting device and manufacturing method thereof
- Patent Title (中): 电子发射器件及其制造方法
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Application No.: US10516545Application Date: 2003-06-13
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Publication No.: US07733006B2Publication Date: 2010-06-08
- Inventor: Takeshi Ichikawa , Ryoji Fujiwara , Daisuke Sasaguri
- Applicant: Takeshi Ichikawa , Ryoji Fujiwara , Daisuke Sasaguri
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2002-172213 20020613; JP2003-125030 20030430
- International Application: PCT/JP03/07544 WO 20030613
- International Announcement: WO03/107377 WO 20031224
- Main IPC: H01J1/304
- IPC: H01J1/304

Abstract:
There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.
Public/Granted literature
- US20060066199A1 Electron-emitting device and manufacturing method thereof Public/Granted day:2006-03-30
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