Invention Grant
- Patent Title: Light emitting device fabrication method
- Patent Title (中): 发光器件制造方法
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Application No.: US11059554Application Date: 2005-02-17
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Publication No.: US07749038B2Publication Date: 2010-07-06
- Inventor: Wei-Yuan Cheng , Yu-Chao Wu
- Applicant: Wei-Yuan Cheng , Yu-Chao Wu
- Applicant Address: TW Yonghe
- Assignee: Hong-Yuan Technology Co., Ltd.
- Current Assignee: Hong-Yuan Technology Co., Ltd.
- Current Assignee Address: TW Yonghe
- Agency: Liu & Liu
- Priority: TW93104058A 20040219
- Main IPC: H01J1/63
- IPC: H01J1/63 ; H01J63/08 ; C09K11/02 ; H05B33/14

Abstract:
A light emitting device fabrication method. The fabrication method of the light emitting device comprises providing a light emitting semiconductor device; positioning a plurality of luminescent particles at the optical path of the light emitting semiconductor device; and reducing the distance between the luminescent particles to enhance the molecular attraction between the luminescent particles, than the luminescent particles is coagulated to a luminescent powder layer by the molecular attraction.
Public/Granted literature
- US20050184651A1 Light emitting device and fabrication method thereof Public/Granted day:2005-08-25
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