Invention Grant
- Patent Title: Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control
- Patent Title (中): 监测热板温度的散射方法,促进关键尺寸控制
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Application No.: US11549306Application Date: 2006-10-13
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Publication No.: US07751025B2Publication Date: 2010-07-06
- Inventor: Li-Jui Chen , Chih-Ming Ke , Bang-Ching Ho , Jen-Chieh Shih , Tsai-Sheng Gau
- Applicant: Li-Jui Chen , Chih-Ming Ke , Bang-Ching Ho , Jen-Chieh Shih , Tsai-Sheng Gau
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Joseph A. Powers
- Main IPC: G03B27/32
- IPC: G03B27/32 ; G03D5/00 ; B05C11/00

Abstract:
A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.
Public/Granted literature
- US20070068453A1 Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control Public/Granted day:2007-03-29
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