Techniques for uniformity tuning in an ion implanter system are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise measuring a first ion beam current density profile along an ion beam path. The method may further comprise measuring a second ion beam current density profile along the ion beam path. In addition, the method may comprise determining a third ion beam current density profile along the ion beam path based at least in part on the first ion beam current density profile and the second ion beam current density profile.